Piezotronic graphene barristor: Efficient and interactive modulation of Schottky barrier
The piezopotential generated in non-centrosymmetric crystals under external mechanical
stimuli can be exploited to modulate the contact characteristics at the metal-semiconductor
interface. The extent of electric modulation by the piezopotential was found to be moderate.
This is mainly because the piezopotential was designed to alter the band bend of the
semiconductor layer, which changed the injection barrier by 0.1 eV. We propose an efficient
method to utilize the piezopotential for modulating Schottky barrier, ie piezotronic graphene …
stimuli can be exploited to modulate the contact characteristics at the metal-semiconductor
interface. The extent of electric modulation by the piezopotential was found to be moderate.
This is mainly because the piezopotential was designed to alter the band bend of the
semiconductor layer, which changed the injection barrier by 0.1 eV. We propose an efficient
method to utilize the piezopotential for modulating Schottky barrier, ie piezotronic graphene …
Piezotronic graphene barristor: Efficient and interactive modulation of Schottky barrier
김성찬， 조정호 - 한국공업화학회연구논문초록집, 2019 - kiss.kstudy.com
The piezopotential generated in non-centrosymmetric crystals under external mechanical
stimuli can be exploited to modulate the contact characteristics at the metal-semiconductor
interface. The extent of electric modulation by the piezopotential was found to be moderate.
This is mainly because the piezopotential was designed to alter the band bend of the
semiconductor layer, which changed the injection barrier by 0.1 eV. We propose an efficient
method to utilize the piezopotential for modulating Schottky barrier, ie piezotronic graphene …
stimuli can be exploited to modulate the contact characteristics at the metal-semiconductor
interface. The extent of electric modulation by the piezopotential was found to be moderate.
This is mainly because the piezopotential was designed to alter the band bend of the
semiconductor layer, which changed the injection barrier by 0.1 eV. We propose an efficient
method to utilize the piezopotential for modulating Schottky barrier, ie piezotronic graphene …
以上显示的是最相近的搜索结果。 查看全部搜索结果