[HTML][HTML] Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
Wide bandgap semiconducting nitrides have found wide-spread application as light emitting
and laser diodes and are under investigation for further application in optoelectronics,
photovoltaics, and efficient power switching technologies. Alloys of the binary
semiconductors allow adjustments of the band gap, an important semiconductor material
characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7
eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic …
and laser diodes and are under investigation for further application in optoelectronics,
photovoltaics, and efficient power switching technologies. Alloys of the binary
semiconductors allow adjustments of the band gap, an important semiconductor material
characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7
eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic …
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