Polariton propagation in high quality semiconductors: Microscopic theory and experiment versus additional boundary conditions
Physical Review B, 2001•APS
Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic
theory. Numerical results are compared with various approximation schemes based on
additional boundary conditions, and with phase-amplitude linear spectroscopy experiments
in high-quality GaAs. A simultaneous description of the measured amplitude and phase of
the transmitted electric field is only possible with the full model.
theory. Numerical results are compared with various approximation schemes based on
additional boundary conditions, and with phase-amplitude linear spectroscopy experiments
in high-quality GaAs. A simultaneous description of the measured amplitude and phase of
the transmitted electric field is only possible with the full model.
Abstract
Linear exciton-polariton propagation in semiconductors is analyzed using a microscopic theory. Numerical results are compared with various approximation schemes based on additional boundary conditions, and with phase-amplitude linear spectroscopy experiments in high-quality GaAs. A simultaneous description of the measured amplitude and phase of the transmitted electric field is only possible with the full model.
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