… intrinsic data retention of STTMRAM is a compelling characteristic [Ikeda 2010] [Thomas
2014] for memory applications. The data retention of an individual MRAM bit is determined by its …

… the precessional spin current (PSC) structure we demonstrate a significant gain in the spin
… In the case of the precessional spin current structure (on the right side of Fig. 1a) three …

… precessional VCMA mechanism and STT-assisted precessional VCMA—are investigated
with 1T-1M MRAM … Another requirement of the precessional VCMA strategy is the usage of an …

… by spin filtering—and spin currents with a spin polarization … We also discuss MRAM
characteristics essential for CMOS … at which spin filtering and spin–orbit precession can occur. …

… Figure 7 : Illustration of the working principle of the control of the precessional dynamics
in ultrafast switching STT-MRAM of small aspect ratio by application of a transverse field. a) …

… current always generates a steady magnetization precession of the composite storage layer
around perpendicular axis. For a given current density, the precession … polarized spin current…

… in MRAM for storing information was based on spin valve … Precession of the spin in switching
state for (a) J = Jc and (b) J > >Jc . … spin in different directions producing a pure spin current, …

… strategies, including precessional VCMA, STT-assisted precessional VCMA and STT-… ,
are studied for MRAM applications. Our results show that the STT-assisted precessional VCMA …

… STT in spin torque oscillator devices.31-33 A very small tilt of the reference layer magnetization
could lead to a zero field steady precession of the free layer precession magnetization.…

… spin current with in-plane transverse spin polarization, theoretically proposed spin swapping
or spin-orbit precession … substantially generate spin currents with different spin polarizations …