Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique
XM Wu, SW Wang, H Wang, Z Wang, SX Shang… - Thin Solid Films, 2000 - Elsevier
Transparent and crack-free Bi2Ti2O7 thin films with strong (111) orientation were
successfully prepared on n-Si (100) by chemical solution deposition (CSD) using bismuth
nitrate and titanium butoxide as starting materials. The structural properties were studied by
X-ray diffraction. The dielectric constant at 100 kHz at room temperature was 118 and loss
factor was 0.074, for a 0.4-μm-thick film annealed at 500° C for 30 min. The leakage current
density was 4.06× 10− 7 A/cm2 at an applied voltage of 15 V.
successfully prepared on n-Si (100) by chemical solution deposition (CSD) using bismuth
nitrate and titanium butoxide as starting materials. The structural properties were studied by
X-ray diffraction. The dielectric constant at 100 kHz at room temperature was 118 and loss
factor was 0.074, for a 0.4-μm-thick film annealed at 500° C for 30 min. The leakage current
density was 4.06× 10− 7 A/cm2 at an applied voltage of 15 V.
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