Preparation and characterization of Bi2Ti2O7 thin films grown by metalorganic chemical vapor deposition
LW Fu, H Wang, SX Shang, XL Wang, PM Xu - Journal of crystal growth, 1994 - Elsevier
Smooth thin films of Bi 2 Ti 2 O 7 have been prepared on silicon and fused quartz substrates
by metalorganic chemical vapor deposition (MOCVD) at atmosphere pressure for the first
time. X-ray diffraction analysis (XRD) showed that films deposited on silicon substrate are
single-phase randomly oriented Bi 2 Ti 2 O 7, and on SiO 2 substrates, a (111) orientation
was obtained. The films are transparent in visible and near infrared and exhibit a sharp
absoption edge at 3nm in the ultraviolet. Measurement of electrical properties gives a …
by metalorganic chemical vapor deposition (MOCVD) at atmosphere pressure for the first
time. X-ray diffraction analysis (XRD) showed that films deposited on silicon substrate are
single-phase randomly oriented Bi 2 Ti 2 O 7, and on SiO 2 substrates, a (111) orientation
was obtained. The films are transparent in visible and near infrared and exhibit a sharp
absoption edge at 3nm in the ultraviolet. Measurement of electrical properties gives a …
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