Probing Nanoscale Schottky Barrier Characteristics at WSe2/Graphene Heterostructures via Electrostatic Doping
F Richheimer, T Vincent, A Catanzaro… - Advanced Electronic …, 2022 - Wiley Online Library
The adoption of 2D transition metal dichalcogenide (TMD) based optoelectronic devices is
limited by Fermi level pinning effects and consequent large contact resistances upon
contacting TMDs with bulk metal electrodes. A potential solution for near‐ideal Schottky–
Mott behavior and concomitant Schottky barrier height control is proposed by contacting
TMDs and (semi‐) metals in van der Waals heterostructures. However, measurement
approaches to directly assess interface parameters relevant to the Schottky–Mott rule on a …
limited by Fermi level pinning effects and consequent large contact resistances upon
contacting TMDs with bulk metal electrodes. A potential solution for near‐ideal Schottky–
Mott behavior and concomitant Schottky barrier height control is proposed by contacting
TMDs and (semi‐) metals in van der Waals heterostructures. However, measurement
approaches to directly assess interface parameters relevant to the Schottky–Mott rule on a …
Probing Nanoscale Schottky Barrier Characteristics at WSe2/Graphene Heterostructures via Electrostatic Doping (Adv. Electron. Mater. 9/2022).
F Richheimer, T Vincent, A Catanzaro… - Advanced …, 2022 - search.ebscohost.com
Abstract Probing Nanoscale Schottky Barrier Characteristics at WSe< sub>
2</sub>/Graphene Heterostructures via Electrostatic Doping (Adv. In the article number
2200196, Sebastian Wood and co-workers demonstrate how advanced scanning probe
microscopy can probe the interface characteristics of monolayer tungsten diselenide on
graphene transistors, distinguishing contributions from interface dipoles and graphene work
function, and providing evidence for unpinned Fermi levels through electrostatic doping. B …
2</sub>/Graphene Heterostructures via Electrostatic Doping (Adv. In the article number
2200196, Sebastian Wood and co-workers demonstrate how advanced scanning probe
microscopy can probe the interface characteristics of monolayer tungsten diselenide on
graphene transistors, distinguishing contributions from interface dipoles and graphene work
function, and providing evidence for unpinned Fermi levels through electrostatic doping. B …
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