Proper scaling of the anomalous Hall effect
Y Tian, L Ye, X Jin - Physical review letters, 2009 - APS
Y Tian, L Ye, X Jin
Physical review letters, 2009•APSWorking with epitaxial films of Fe, we succeeded in independent control of different
scattering processes in the anomalous Hall effect. The result clearly exposed the
fundamental flaws of the conventional scaling ρ AH= f (ρ xx) between the anomalous Hall
resistivity and longitudinal resistivity. A new scaling ρ AH= f (ρ xx 0, ρ xx) that also involves
the residual resistivity has been established which helps identify the intrinsic and extrinsic
mechanisms of the anomalous Hall effect.
scattering processes in the anomalous Hall effect. The result clearly exposed the
fundamental flaws of the conventional scaling ρ AH= f (ρ xx) between the anomalous Hall
resistivity and longitudinal resistivity. A new scaling ρ AH= f (ρ xx 0, ρ xx) that also involves
the residual resistivity has been established which helps identify the intrinsic and extrinsic
mechanisms of the anomalous Hall effect.
Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result clearly exposed the fundamental flaws of the conventional scaling between the anomalous Hall resistivity and longitudinal resistivity. A new scaling that also involves the residual resistivity has been established which helps identify the intrinsic and extrinsic mechanisms of the anomalous Hall effect.
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