… SiGe in the recessed source/drain [8] and Freescale has reported SOI-based embedded SiGe
PMOS device [9… by using a pseudomorphic, or strained SiGe layer in the channel. Strained …

… representation of pseudomorphic growth, (a) Relaxed SiGe (… At present, the Si/SiGe/Si
sandwich structure is probably the … voltage VTHi the source-drain resistance RSDand the effective …

… trench isolation, high-stress capping layers around the gate, and materials such as epitaxial
Sii-xGex in the source / drain regions, is effective in small devices where it is possible to …

… be extended into the pseudomorphic epitaxial layer. However, … source/drain pads. 200
mm data.[JAH 05],[DOR 07],[TAC 09]. … The surface stays smooth after epitaxy [DES 08], Si/SiGe/Si …

… Also, if the embedded SiGe source/drain is formed in Ge … thickness is thinner than a critical
thickness, pseudomorphic SiGe … , when the SiGe channel layer is very thin in this Si/SiGe/Si …

… valence band of the Si/SiGe/Si heterostructure, with a depth of … For the p-channel transistor,
an embedded SiGe source drain … ultra thin body SOI~ 5nm Figure 1.11 (a) A schematic cross-…

… devices with wider applications range have been proposed using the strain engineering (such
as the embedded SiGe source/drain… The first strategy is to use pseudomorphic strained Si …

… or SiGe layer above the critical thickness) or pseudomorphic … Right Side: Ge QD embedded
in silicon without MD network. … MOS transistors are defined by the source/ drain (S/D) doping…

… view of device applications, both pseudomorphic growth and … MOSFETs, elevated source/drain
regions in shallow-junction … of the Si/SiGe/Si heterostructure is grown, the SiGe layer is …

… Additional stress from SiGe source/drain in a non-patterned … the performance of scaled
devices embedding strain. This … stack using several epitaxy steps (Si/SiGe/Si/...), the nanosheet …