Pure zincblende GaAs nanowires grown by Ga-assisted chemical beam epitaxy
GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si (111)
substrates covered by a thin oxide layer using different substrate temperatures and growth
times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed
by scanning electron microscopy, with diameters and lengths in the range of 40–65nm and
0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences
of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface …
substrates covered by a thin oxide layer using different substrate temperatures and growth
times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed
by scanning electron microscopy, with diameters and lengths in the range of 40–65nm and
0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences
of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface …
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