Raman scattering by the E2h and A1 (LO) phonons of InxGa1− xN epilayers (0.25< x< 0.75) grown by molecular beam epitaxy
We use Raman scattering to investigate the composition behavior of the E 2h and A 1 (LO)
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and
in-depth strain/composition gradients on the frequency of the A 1 (LO) bands. For this
purpose, we have performed visible and ultraviolet Raman measurements on a set of high-
quality epilayers grown by molecular beam epitaxy with In contents over a wide composition
range (0.25< x< 0.75). While the as-measured A 1 (LO) frequency values strongly deviate …
phonons of In x Ga 1− x N and to evaluate the role of lateral compositional fluctuations and
in-depth strain/composition gradients on the frequency of the A 1 (LO) bands. For this
purpose, we have performed visible and ultraviolet Raman measurements on a set of high-
quality epilayers grown by molecular beam epitaxy with In contents over a wide composition
range (0.25< x< 0.75). While the as-measured A 1 (LO) frequency values strongly deviate …
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