The lattice vibrational properties of new semiconductor alloys, GaAs 1− x Bi x and InAs 1− x
Bi x, are reported. These alloys, which were grown by metalorganic vapor phase epitaxy
technique, contain a small amount (1.2%–3.8%) of Bi. A detail Raman scattering study of
these new alloys, which exhibit weak temperature dependence of the band gap with
increasing amount of Bi, is reported here. Good crystalline quality and spatial homogeneity
was confirmed using micro-Raman technique. The alloys show ternary compound behavior …