Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs

A Mlayah, R Carles, G Landa, E Bedel… - Journal of applied …, 1991 - pubs.aip.org
Raman spectroscopy measurements have been performed on GaAs: Be samples with high
crystalline quality and exceptional heavy doping level ranging from 1019 to 1.4~ 1021 cm-3.
The recorded spectra show a structure we assigned to a coupled LO phonon-damped
plasmon mode. A theoretical expression for the Raman scattering rate by this mode has
been derived from a dielectric model and compared to the experimental data. Using a fitting
procedure the doping level of the samples has been estimated in agreement with Hall …
以上显示的是最相近的搜索结果。 查看全部搜索结果