Raman-scattering probe of anharmonic effects in GaAs
P Verma, SC Abbi, KP Jain - Physical Review B, 1995 - APS
P Verma, SC Abbi, KP Jain
Physical Review B, 1995•APSA comparative study of anharmonic effects in various structural forms of GaAs, namely
crystalline, disordered and ion-implanted, and pulse laser annealed (PLA), using
temperature-dependent Raman scattering, is reported for various phonon modes over the
temperature range 10–300 K. The disordered and PLA samples are found to have greater
anharmonicity than crystalline GaAs. The localized vibrational mode in PLA GaAs shows
shorter relaxation time than the LO-phonon mode.
crystalline, disordered and ion-implanted, and pulse laser annealed (PLA), using
temperature-dependent Raman scattering, is reported for various phonon modes over the
temperature range 10–300 K. The disordered and PLA samples are found to have greater
anharmonicity than crystalline GaAs. The localized vibrational mode in PLA GaAs shows
shorter relaxation time than the LO-phonon mode.
Abstract
A comparative study of anharmonic effects in various structural forms of GaAs, namely crystalline, disordered and ion-implanted, and pulse laser annealed (PLA), using temperature-dependent Raman scattering, is reported for various phonon modes over the temperature range 10–300 K. The disordered and PLA samples are found to have greater anharmonicity than crystalline GaAs. The localized vibrational mode in PLA GaAs shows shorter relaxation time than the LO-phonon mode.
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