Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time
S Koveshnikov, K Matthews, K Min… - 2012 International …, 2012 - ieeexplore.ieee.org
We have developed novel real-time methodology to determine intrinsic forming and
switching characteristics of HfO x based RRAM. Elimination of parasitics in 50nm× 50nm
cross-bar 1T1R devices (C p<; 50fF) integrated on 300mm wafers using fab-friendly TiN
electrodes enabled superior control of high and low resistance of a conductive filament (CF).
Sub 50fF parasitics also critically enable a pulsed forming method compatible with high
volume manufacturing (HVM). A novel assessment of RRAM operation trade-offs is also …
switching characteristics of HfO x based RRAM. Elimination of parasitics in 50nm× 50nm
cross-bar 1T1R devices (C p<; 50fF) integrated on 300mm wafers using fab-friendly TiN
electrodes enabled superior control of high and low resistance of a conductive filament (CF).
Sub 50fF parasitics also critically enable a pulsed forming method compatible with high
volume manufacturing (HVM). A novel assessment of RRAM operation trade-offs is also …
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