Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond

M Kim, JH Seo, U Singisetti, Z Ma - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Journal of Materials Chemistry C, 2017pubs.rsc.org
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material
platform possesses a high level of material quality similar to their bulk counterparts because
single crystallinity is maintained. Si, Ge, and III–V based membranes have been widely
studied for flexible electronic and optoelectronic devices such as thin-film transistors and
photodetectors. However, the current status of research and development on free-standing …
Free-standing single crystalline semiconductor membranes have gained intensive attention over the last few years due to their versatile usage in many applications. This material platform possesses a high level of material quality similar to their bulk counterparts because single crystallinity is maintained. Si, Ge, and III–V based membranes have been widely studied for flexible electronic and optoelectronic devices such as thin-film transistors and photodetectors. However, the current status of research and development on free-standing single crystalline wide band-gap membranes is at a relatively early stage compared to IV and III–V based membranes. This review highlights recent advances in free-standing wide band-gap membranes, including GaN, SiC, ZnO, β-Ga2O3, and diamond and their applications. Fabrication techniques of each membrane are presented with material characterization. Some prospects for new research opportunities and challenges are also discussed.
The Royal Society of Chemistry
以上显示的是最相近的搜索结果。 查看全部搜索结果