effect transistor (SG-RFET) are presented. The device characteristics of SG-RFET is
benchmarked against the silicon gate-all-around FET (GAAFET) with same gate length.
Reconfigurable circuits-inverter, current mirror, ring oscillator using SG-RFET device are
validated with simulation results in Sentaurus technology computer-aided design (TCAD)
tool. Simple design, low path delay and reduced routing complexity make SG-RFET a …