Record endurance for single-walled carbon nanotube–based memory cell
Nanoscale research letters, 2010•Springer
We study memory devices consisting of single-walled carbon nanotube transistors with
charge storage at the SiO 2/nanotube interface. We show that this type of memory device is
robust, withstanding over 10 5 operating cycles, with a current drive capability up to 10− 6 A
at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device
performance depends on temperature and pressure, while both endurance and data
retention are improved in vacuum.
charge storage at the SiO 2/nanotube interface. We show that this type of memory device is
robust, withstanding over 10 5 operating cycles, with a current drive capability up to 10− 6 A
at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device
performance depends on temperature and pressure, while both endurance and data
retention are improved in vacuum.
Abstract
We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO2/nanotube interface. We show that this type of memory device is robust, withstanding over 105 operating cycles, with a current drive capability up to 10−6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum.
Springer
以上显示的是最相近的搜索结果。 查看全部搜索结果