Resonant nonlinear susceptibility near the GaAs band gap
XC Zhang, Y Jin, K Yang, LJ Schowalter - Physical review letters, 1992 - APS
XC Zhang, Y Jin, K Yang, LJ Schowalter
Physical review letters, 1992•APSWe report new results on subpicosecond optical rectification near the semiconductor GaAs
band gap at room temperature. We discriminate between radiation produced by real carriers
and that produced by optical rectification by using normal and off-normal incident optical
illumination. Under normal incident optial illumination of the< 111> GaAs surface, the
amplitude of the nonlinear susceptibility varies dramatically (2 orders of magnitude) and the
sign of the susceptibility reverses when the photon energy is tuned above the band gap …
band gap at room temperature. We discriminate between radiation produced by real carriers
and that produced by optical rectification by using normal and off-normal incident optical
illumination. Under normal incident optial illumination of the< 111> GaAs surface, the
amplitude of the nonlinear susceptibility varies dramatically (2 orders of magnitude) and the
sign of the susceptibility reverses when the photon energy is tuned above the band gap …
Abstract
We report new results on subpicosecond optical rectification near the semiconductor GaAs band gap at room temperature. We discriminate between radiation produced by real carriers and that produced by optical rectification by using normal and off-normal incident optical illumination. Under normal incident optial illumination of the< 111> GaAs surface, the amplitude of the nonlinear susceptibility varies dramatically (2 orders of magnitude) and the sign of the susceptibility reverses when the photon energy is tuned above the band gap. This resonance enhancement and the sign reversal are explained by the dispersion of the second-order nonlinear susceptibility at the band gap.
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