Review of silicon carbide processing for power MOSFET

C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - Crystals, 2022 - mdpi.com
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and
higher saturation drift velocity, SiC has attracted much attention from researchers and the
industry for decades. With the advances in material science and processing technology,
many power applications such as new smart energy vehicles, power converters, inverters,
and power supplies are being realized using SiC power devices. In particular, SiC …

[PDF][PDF] Review of Silicon Carbide Processing for Power MOSFET. Crystals 2022, 12, 245

C Langpoklakpam, AC Liu, KH Chu, LH Hsu, WC Lee… - 2022 - academia.edu
Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and
higher saturation drift velocity, SiC has attracted much attention from researchers and the
industry for decades. With the advances in material science and processing technology,
many power applications such as new smart energy vehicles, power converters, inverters,
and power supplies are being realized using SiC power devices. In particular, SiC …
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