In this study, CuSbSe₂ chalcostibite thin films were deposited on glass substrates held at different temperatures using e-beam evaporation from the pre-synthesized CuSbSe₂ bulk source material. Bulk CuSbSe₂ source compound was synthesized by mechanical ball milling of constituent elements. Substrate temperature and growth condition were optimized to obtain the near stoichiometric chalcostibite thin films. Structural, morphological and optical properties of the synthesized thin films were investigated using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), dynamic force microscopy (DFM), UV–vis–NIR spectroscopy and Raman spectroscopy. Positive value of the measured hall coefficient indicated the p-type nature of CuSbSe₂ thin films having a carrier concentration of 5.6 × 10¹⁵ cm⁻³. The thin films were found to have a direct optical band gap (E_g) value of ~1.2 eV and absorption coefficient greater than 10⁴ cm⁻¹.