Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers
The SiC/SiO 2 interface is generally considered to be the cause for the reduced electron
mobility of SiC power devices. Previous studies have shown a correlation between the
mobility and the transition layer width at the SiC/SiO 2 interface. The authors investigated
this interface with atomic resolution Z-contrast imaging and electron energy-loss
spectroscopy, and discovered that this transition region was due to the roughness of the
vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets …
mobility of SiC power devices. Previous studies have shown a correlation between the
mobility and the transition layer width at the SiC/SiO 2 interface. The authors investigated
this interface with atomic resolution Z-contrast imaging and electron energy-loss
spectroscopy, and discovered that this transition region was due to the roughness of the
vicinal interface. The roughness of a vicinal interface consisted of atomic steps and facets …
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