Scaling of the anomalous Hall effect in SrRuO
N Haham, Y Shperber, M Schultz, N Naftalis… - Physical Review B …, 2011 - APS
Physical Review B—Condensed Matter and Materials Physics, 2011•APS
We measure the anomalous Hall effect (AHE) resistivity ρ xy in thin films of the itinerant
ferromagnet SrRuO 3. At low temperatures, the AHE coefficient R s varies with ρ xx 2, and at
higher temperatures, R s reaches a peak and then changes sign just below T c. We find that
for all films studied, R s scales with resistivity in the entire ferromagnetic phase. We attribute
the observed behavior to the contribution of the extrinsic side-jumps mechanism and the
intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering …
ferromagnet SrRuO 3. At low temperatures, the AHE coefficient R s varies with ρ xx 2, and at
higher temperatures, R s reaches a peak and then changes sign just below T c. We find that
for all films studied, R s scales with resistivity in the entire ferromagnetic phase. We attribute
the observed behavior to the contribution of the extrinsic side-jumps mechanism and the
intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering …
We measure the anomalous Hall effect (AHE) resistivity in thin films of the itinerant ferromagnet SrRuO. At low temperatures, the AHE coefficient varies with , and at higher temperatures, reaches a peak and then changes sign just below . We find that for all films studied, scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side-jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering rates.
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