In this paper, an analytical model for capacitance measurements by scanning microwave
microscopy (SMM)/scanning microwave spectroscopy is presented. The tip-sample
interactions are included by using the physics of metal-oxide-semiconductor junctions and
the influence of various experimental parameters, such as the operation frequency, tip bias,
tip area, oxide thickness, and sample doping are discussed. For calibrated carrier profiling it
is shown that all relevant operation parameters of the SMM can be condensed into a single …