Integration of inductors into high-frequency silicon circuits currently comes at the expense of
a low-quality factor (Q), mainly because of electromagnetic interactions with the underlying
substrate. Various fabrication methods for high Q inductors have been proposed, but poor
compatibility with standard semiconductor process technology is a common problem. A
promising technique involving in-plane fabrication and surface tension self-assembly to the
vertical orientation has been previously reported for copper inductors. Here, a …

Integration of inductors into high-frequency silicon circuits currently comes at the expense of
a low-quality factor (Q), mainly because of electromagnetic interactions with the underlying
substrate. Various fabrication methods for high Q inductors have been proposed, but poor
compatibility with standard semiconductor process technology is a common problem. A
promising technique involving in-plane fabrication and surface tension self-assembly to the
vertical orientation has been previously reported for copper inductors. Here, a …