Self-heat reliability considerations on Intel's 22nm Tri-Gate technology

C Prasad, L Jiang, D Singh… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
C Prasad, L Jiang, D Singh, M Agostinelli, C Auth, P Bai, T Eiles, J Hicks, CH Jan, K Mistry…
2013 IEEE International Reliability Physics Symposium (IRPS), 2013ieeexplore.ieee.org
… This work has reported on the comprehensive data collection, thermal modeling and
validation work undertaken on Intel’s 22nm Tri-Gate technology. Extensive measurements of
transistor self-heat at various locations in the Tri-Gate architecture stack were matched very well
to 3DFEM thermal simulations. Clear qualitative matching was demonstrated between
3DFEM-calibrated circuit simulations and physical measurements of the local temperature rise.
The … It is very important to emphasize that the overall selfheating of Intel’s 22nm Tri-Gate …
This paper describes various measurements on self-heat performed on Intel's 22nm process technology, and outlines its reliability implications. Comparisons to thermal modeling results and analytical data show excellent matching.
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