… area compared to previous generations. These topics … on various substrates as a function
of film thickness.45, 56 (A-Ru: ALD Ru, S-Ru: sputtered Ru, two Ru substrates have different …

… Additional scaling of the memory cell area could be achieved … where the actual physical
distance between the source and … thin films on Si substrates has not been successful, implying …

… memory device with gradually increasing oxide thickness. When the MNOS memory region
is switched between … oxide between the silicon islands and the silicon substrate thicker than …

… , BO must be thicker than TO and has a higher effective dielectric … schematic diagram of the
memory cell area viewed from the top, … semiconductor memory devices, new memory devices …

… with miniaturization, and the reduction in cell area owing to the simplified structure. However,
… in reducing the film thickness, it has not been investigated for use in memory devices. Our …

… We describe here a compact cell with a 30-fold reduction in cell area and also present the
… of a 40 nm thick silicon layer separated from the underlying silicon substrate by 350 nm of …

… The n-channel metal–oxide–semiconductor field effect transistors (NMOSFET) have … of an
8 × 8 memory cell matrix in a NOR type array with an active area of 1 × 1 cm 2 on a 25 μm thick …

… per unit area by taking advantage of the following effect. In a … have a substrate and has an
extremely small junction area. A SESO memory cell has two leakage paths, one between the …

… If -channel operation is required with a -type starting substrate… The ONO dielectric for the
scaled devices have thicknesses … Thus, with 0.2 m feature sizes, we expect that a cell area of …

… Roadmap for Semiconductors118 has also stressed the … use with large-area flexible substrates
has been limited because … the bending condition (the substrate distance and the bending …