Semipolar {20 2¯ 1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing
S Gandrothula, H Zhang, P Shapturenka, R Anderson… - Crystals, 2021 - mdpi.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing
LD. Two types of facet feasibility studies were conducted:(1)“handmade” facets, wherein
lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through
reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed
the laser action in the RIE facet LDs with a threshold current of~ 19 kAcm− 2 and maximum …
lateral overgrown (ELO) wing of a semipolar {20 2¯ 1} GaN substrate, termed an ELO wing
LD. Two types of facet feasibility studies were conducted:(1)“handmade” facets, wherein
lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through
reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed
the laser action in the RIE facet LDs with a threshold current of~ 19 kAcm− 2 and maximum …
[PDF][PDF] Semipolar {20𝟐̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing
S Gandrothula, H Zhang, P Shapturenka, R Anderson… - 2022 - videleaf.com
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial
lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing
LD. Two types of facet feasibility studies were conducted:(1)“handmade” facets, wherein
lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through
reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed
the laser action in the RIE facet LDs with a threshold current of~ 19 kAcm− 2 and maximum …
lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing
LD. Two types of facet feasibility studies were conducted:(1)“handmade” facets, wherein
lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through
reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed
the laser action in the RIE facet LDs with a threshold current of~ 19 kAcm− 2 and maximum …
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