Low noise global shutter image sensor working in the charge domain
F Roy, Y Cazaux, P Waltz, P Malinge… - IEEE Electron …, 2018 - ieeexplore.ieee.org
F Roy, Y Cazaux, P Waltz, P Malinge, N Billon-Pierron
IEEE Electron Device Letters, 2018•ieeexplore.ieee.orgIn this letter, we present global shutter (GS) pixel using active deep trench isolation gate to
transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance.
This architecture is compatible with conventional correlated double sampling. GS readout
noise lower than 2e-is demonstrated. The fully depleted pinned capacitance is able to store
12ke-with dark current lower than 25e-/s at 60° C. The GS efficiency, better than 99.96% at
550nm, is reported.
transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance.
This architecture is compatible with conventional correlated double sampling. GS readout
noise lower than 2e-is demonstrated. The fully depleted pinned capacitance is able to store
12ke-with dark current lower than 25e-/s at 60° C. The GS efficiency, better than 99.96% at
550nm, is reported.
In this letter, we present global shutter (GS) pixel using active deep trench isolation gate to transfer and store photodiode charge signal into a fully depleted pinned MOS capacitance. This architecture is compatible with conventional correlated double sampling. GS readout noise lower than 2e- is demonstrated. The fully depleted pinned capacitance is able to store 12ke- with dark current lower than 25e-/s at 60 °C. The GS efficiency, better than 99.96% at 550nm, is reported.
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