… limit capacitance. A high-dose ion implantation process performed at close to vertical angles
into the trench opening has … Device and array co-design was critical for success. The access …

… capacitance, he got an idea of a trench capacitor DRAM cell. … , highlydoped drain, and
silicon-on-insulator, respectively. Then, … to the vertical transistor, a few DRAM cells utilizing vertical …

… no need of wells or inter-device trenches. In addition, the vertical isolation achieves thin films,
… The SOI versatility has been taken advantage of for conceiving capacitor-less DRAMs. SOI …

… trench became the starting wafer for theconventional logic process. The DRAM capacitor still
has capacitance … be etched from bulk silicon or silicon-on-insulator (SOI) silicon. Schematic …

… A 16-Mbit silicon-on-insulator (SOI) DRAM with a 0.3- m design … on process integration
of the cell capacitor using the pattern-… 2 and 3 show the vertical structure of the cross-sectional …

… devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator …
" For contributions to silicon-on-insulator technology and thin body devices." In the book, …

… the more vertical profile of storage node, the larger capacitor … line capacitance of this novel
cell, COB stack cell, trench cell … is also eliminated by resembling nature of silicon-on-insulator (…

… gate-all-around and vertical silicon pillar is examined in terms of … fabricated here is the cell
transistor before the cell capacitor … This fact was a key enabler of FDsilicon on insulator (SOI) …

… memory (DRAM) is consisted of transistor and capacitor and … Structures, such as silicon-on-insulator,
double gate, or gate-… fabricated using the conventional vertical trench processes, …

… The capacitor is eliminated from the 1T1C-DRAM [8], and the … behaviors on a vertical
silicon-on-insulatorbased metal–… (a) 1T-DRAM cell array of the proposed device and disturbance …