Simulation of 100 nm vertical replacement gate (VRG) MOSFET
In this work, we simulate two dimensional n‐type 100 nm vertical replacement gate (VRG)
metal oxide semiconductor field oxide transistor (MOSFET). The simulations are done with
using DEVEDIT and ATLAS from Silvaco International. The VRG VMOST with channel
doping carrier concentration of 3.5× 10 18 cm− 3 and the width of the body region between
the two channel lengths of 200 nm resulted in a threshold voltage (Vth) of 0.90 V, an off‐
state leakage current (Ioff) of 6.71× 10− 15 A/μ m, a subthreshold slope (S) of 95.84 mV/dec …
metal oxide semiconductor field oxide transistor (MOSFET). The simulations are done with
using DEVEDIT and ATLAS from Silvaco International. The VRG VMOST with channel
doping carrier concentration of 3.5× 10 18 cm− 3 and the width of the body region between
the two channel lengths of 200 nm resulted in a threshold voltage (Vth) of 0.90 V, an off‐
state leakage current (Ioff) of 6.71× 10− 15 A/μ m, a subthreshold slope (S) of 95.84 mV/dec …
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