Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart… - Applied Physics …, 2013 - pubs.aip.org
Simultaneous temperature-dependent measurements of resistance transients (RTs) and
spatially resolved surface potential transients were made after bias switching on AlGaN/GaN
high electron mobility transistors (HEMTs). We find an E c− 0.57 eV trap, previously
correlated with HEMT degradation, located in the GaN buffer and not in the AlGaN barrier or
at the AlGaN surface. The amplitude of the E c− 0.57 eV trap in RTs depends strongly on the
Fe-concentration in the GaN buffer. Filling of this trap occurs only under bias conditions …
spatially resolved surface potential transients were made after bias switching on AlGaN/GaN
high electron mobility transistors (HEMTs). We find an E c− 0.57 eV trap, previously
correlated with HEMT degradation, located in the GaN buffer and not in the AlGaN barrier or
at the AlGaN surface. The amplitude of the E c− 0.57 eV trap in RTs depends strongly on the
Fe-concentration in the GaN buffer. Filling of this trap occurs only under bias conditions …
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