Spectroscopic properties of Sm3+ (4f 5) in GaN
JB Gruber, B Zandi, HJ Lozykowski… - Journal of applied …, 2002 - pubs.aip.org
We have analyzed the cathodoluminescence spectra of Sm3 ions implanted and annealed
in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and
1050 nm, representing transitions from the 4G5/2 to the 6HJ and 6FJ manifolds of Sm3 (4f5).
Emission lifetimes were determined at various temperatures between 7 and 320 K for
transitions from 4G5/2 to 6H5/2, 6H7/2, and 6H9/2. Lattice-sum calculations were carried out
to determine the crystal-field splitting of the multiplet manifolds. With individual Stark levels …
in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and
1050 nm, representing transitions from the 4G5/2 to the 6HJ and 6FJ manifolds of Sm3 (4f5).
Emission lifetimes were determined at various temperatures between 7 and 320 K for
transitions from 4G5/2 to 6H5/2, 6H7/2, and 6H9/2. Lattice-sum calculations were carried out
to determine the crystal-field splitting of the multiplet manifolds. With individual Stark levels …
以上显示的是最相近的搜索结果。 查看全部搜索结果