Spectroscopy and electronic structure of jet‐cooled GaAs
GW Lemire, GA Bishea, SA Heidecke… - The Journal of chemical …, 1990 - pubs.aip.org
The ionization potential ofGaAs has been bracketed as IP (GaAs)= 7.17±0.75 eY, and a
reevaluation of the third-law measurement of the bond strength provides Do (GaAs)=
2.06±0.05 eY. Comparisons to group IY and other group III-Y diatomics, and to the bulk solid
materials are also presented.
reevaluation of the third-law measurement of the bond strength provides Do (GaAs)=
2.06±0.05 eY. Comparisons to group IY and other group III-Y diatomics, and to the bulk solid
materials are also presented.
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