Steep slope and near non-hysteresis of FETs with antiferroelectric-like HfZrO for low-power electronics
MH Lee, YT Wei, KY Chu, JJ Huang… - IEEE Electron …, 2015 - ieeexplore.ieee.org
MH Lee, YT Wei, KY Chu, JJ Huang, CW Chen, CC Cheng, MJ Chen, HY Lee, YS Chen…
IEEE Electron Device Letters, 2015•ieeexplore.ieee.orgThe antiferroelectricity in HfZrO 2 (HZO) annealed at 600° C with an abrupt turn ON of FET
characteristics with SS mV/dec and SS mV/dec over 4 decades of is demonstrated. The near
non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent
polarization and a coercive field. A feasible concept of coupling the antiferroelectric and
ferroelectric type HZO are used for low-power electronics and the memory applications,
respectively.
characteristics with SS mV/dec and SS mV/dec over 4 decades of is demonstrated. The near
non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent
polarization and a coercive field. A feasible concept of coupling the antiferroelectric and
ferroelectric type HZO are used for low-power electronics and the memory applications,
respectively.
The antiferroelectricity in HfZrO 2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SS mV/dec and SS mV/dec over 4 decades of is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.
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