Strain relief in compositionally graded InAsxSb1− x buffer layers and InAsxSb1− x/InSb strained-layer superlattices grown by MOCVD
RM Biefeld, CR Hills, SR Lee - Journal of crystal growth, 1988 - Elsevier
Abstract InAS x Sb 1-x/InSb strained-layer superlattices were grown by metalorganic
chemical vapor deposition on four different types of compositionally graded InAs y Sb 1-y
buffer layers. The samples were examined by X-ray diffraction and optical and transmission
electron microscopy. Comparisons of the resulting surface morphology and residual strain
were made between constant composition, step-graded and two types of continuously
graded buffer layers. Both the buffer layer thickness and composition profile were found to …
chemical vapor deposition on four different types of compositionally graded InAs y Sb 1-y
buffer layers. The samples were examined by X-ray diffraction and optical and transmission
electron microscopy. Comparisons of the resulting surface morphology and residual strain
were made between constant composition, step-graded and two types of continuously
graded buffer layers. Both the buffer layer thickness and composition profile were found to …
以上显示的是最相近的搜索结果。 查看全部搜索结果