Strain-induced island scaling during heteroepitaxy
W Dorsch, HP Strunk, H Wawra, G Wagner… - Applied physics …, 1998 - pubs.aip.org
We investigated the composition-dependent size of pseudomorphic Si 1− x Ge x islands on
Si (001). Si 1− x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The
island growth occurs near thermodynamic equilibrium and facilitates a comparison of the
results with predictions based on energetics. We find pseudomorphic islands with base
widths ranging from several μ m to a few nm. We show that it is possible to adjust the island
size by simply choosing the appropriate layer composition. Varying deposition temperatures …
Si (001). Si 1− x Ge x layers with 0.05⩽ x⩽ 0.54 were deposited from metallic solution. The
island growth occurs near thermodynamic equilibrium and facilitates a comparison of the
results with predictions based on energetics. We find pseudomorphic islands with base
widths ranging from several μ m to a few nm. We show that it is possible to adjust the island
size by simply choosing the appropriate layer composition. Varying deposition temperatures …
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