[PDF][PDF] Strained layer SCH SQW InGaAs/GaAs lasers for 980-nm band
T OCHALSKI, A WÓJCIK, E KOWALCZYK… - Opto-Electronics …, 2001 - researchgate.net
Strained layer InGaAs/GaAs SCH SOW (separate confinement heterostructure single
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW
(continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry
using Schottky isolation and ridge waveguide construction. Threshold current densities of
the onder of J= 280 A/cm"(for the resonator length L= 700 um) and differential efficiency 7=
040 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR …
quantum well) lasers were grown by a molecular beam epitaxy (MBE). Highly reliable CW
(continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry
using Schottky isolation and ridge waveguide construction. Threshold current densities of
the onder of J= 280 A/cm"(for the resonator length L= 700 um) and differential efficiency 7=
040 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR …
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