[HTML][HTML] Strong emission of THz radiation from GaAs microstructures on Si
Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on
a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the
sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The
spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular,
the spectral amplitude increases at higher frequencies. The presented GaAs microstructures
on a Si substrate can be suitable for practical and efficient THz sources required in various …
a Si substrate is reported. The peak–to–peak amplitude of terahertz radiation from the
sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The
spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular,
the spectral amplitude increases at higher frequencies. The presented GaAs microstructures
on a Si substrate can be suitable for practical and efficient THz sources required in various …
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