Structural and electrical properties of (Bi0. 88Sb0. 12) 0.86 In0. 14 crystal
R Varasada, SM Vyas, P Patel, V Patel… - Materials Today …, 2021 - Elsevier
R Varasada, SM Vyas, P Patel, V Patel, H Pavagadhi, MP Jani
Materials Today: Proceedings, 2021•ElsevierThe III-V groups of materials with narrow energy gap possessing favourable attributes have
attracted the attention of researchers, as a special class of optoelectronic compounds.(Bi
0.88 Sb 0.12) 0.86 In 0.14 crystal has been grown using vertical Bridgman Technique by
maintaining axial temperature gradient 60° C/cm with lowering growth rate 0.7 cm/h. The
crystallinity of the material depends on the shape of the ampoule and diameters on the
crystal and homogeneity was studied. Study of structural characterization using X-Ray …
attracted the attention of researchers, as a special class of optoelectronic compounds.(Bi
0.88 Sb 0.12) 0.86 In 0.14 crystal has been grown using vertical Bridgman Technique by
maintaining axial temperature gradient 60° C/cm with lowering growth rate 0.7 cm/h. The
crystallinity of the material depends on the shape of the ampoule and diameters on the
crystal and homogeneity was studied. Study of structural characterization using X-Ray …
Abstract
The III-V groups of materials with narrow energy gap possessing favourable attributes have attracted the attention of researchers, as a special class of optoelectronic compounds. (Bi0.88Sb0.12)0.86In0.14 crystal has been grown using vertical Bridgman Technique by maintaining axial temperature gradient 60°C/cm with lowering growth rate 0.7 cm/h. The crystallinity of the material depends on the shape of the ampoule and diameters on the crystal and homogeneity was studied.
Study of structural characterization using X-Ray Analysis, optical study characterized by UV–VIS spectroscopy and Electrical properties studied using Hall Measurement as well as I-V measurement. The results are reported and discuss in detail.
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