mixtures are presented. For plasma diagnostics, optical emission spectroscopy (actinometry)
was used. Using the actinometry technique, it was possible to show that etching
mechanisms were different for Si-F and WF chemistries. Anisotropic etching of
tungsten/tungsten nitride using conventional reactive ion etcher has been obtained, and
conditions of achieving anisotropic etching have been analyzed. A correlation is found …