calculations of peak wavelengths and oscillator strengths of the transitions from the bound to
first and second excited states were made for the InxGa1− xAs/GaAs and InAs/AlxGa 1− xAs
systems. The results show that transition from the ground to the first excited state in the
growth-direction polarization has the largest absorption. The results of our calculations were
found to be in good agreement with the observed peak detection wavelengths of the …