Study of sputtered molybdenum nitride as a diffusion barrier
VP Anitha, A Bhattacharya, NG Patil, S Major - Thin Solid Films, 1993 - Elsevier
Molybdenum nitride thin films were deposited using reactive rf magnetron sputtering. Single
phase γ-Mo 2 N films having fcc structure and exhibiting metallic conductivity have been
obtained over a wide range of nitrogen partial pressures. The temperature dependence of
resistivity studied in the range 30–300 K showed a negative temperature coefficient of
resistivity for all the films. The activation energy was found to be temperature dependent,
indicating that conduction in these films is dominated by carrier hopping through localized …
phase γ-Mo 2 N films having fcc structure and exhibiting metallic conductivity have been
obtained over a wide range of nitrogen partial pressures. The temperature dependence of
resistivity studied in the range 30–300 K showed a negative temperature coefficient of
resistivity for all the films. The activation energy was found to be temperature dependent,
indicating that conduction in these films is dominated by carrier hopping through localized …
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