Successive conformal mapping technique to extract inner fringe capacitance of underlap DG-FinFET and its variations with geometrical parameters
SM Sharma, S Dasgupta… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
IEEE Transactions on Electron Devices, 2017•ieeexplore.ieee.org
We propose a new analytical model based on successive conformal mapping to compute
the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with
doping modulated source/drain (S/D) and gate underlap for sub 20-nm node. The
conventional analytical model of capacitance and resistance for planar MOSFET cannot be
applied to the nonplanar multigate MOSFET. This model considers 3-D devices fabricated
on bulk oxide, gate-S/D extension with nonuniform doping gradient and spacers. The …
the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with
doping modulated source/drain (S/D) and gate underlap for sub 20-nm node. The
conventional analytical model of capacitance and resistance for planar MOSFET cannot be
applied to the nonplanar multigate MOSFET. This model considers 3-D devices fabricated
on bulk oxide, gate-S/D extension with nonuniform doping gradient and spacers. The …
We propose a new analytical model based on successive conformal mapping to compute the bias dependent inner fringe capacitance in nonplanar multigate MOSFET structure with doping modulated source/drain (S/D) and gate underlap for sub 20-nm node. The conventional analytical model of capacitance and resistance for planar MOSFET cannot be applied to the nonplanar multigate MOSFET. This model considers 3-D devices fabricated on bulk oxide, gate-S/D extension with nonuniform doping gradient and spacers. The percentage variation of inner fringe capacitance with respect to underlap length is studied for various fin width and oxide thickness.
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