We measure electronic transport through point contacts in a high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.