Surface states in AlGaN/GaN high electron mobility transistors: Quantitative profiles and dynamics of the surface Fermi level
Y Turkulets, I Shalish - arXiv preprint arXiv:1904.08683, 2019 - arxiv.org
We present a method to obtain quantitative profiles of surface state charge density and
monitor its dynamics under various stress conditions in high electron mobility transistor
(HEMT) devices. The method employs an optical spectroscopy of the channel current at
various bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To
analyze the results, we propose a model, according to which the energy distribution of the
surface charge density may be obtained from the derivative of the channel photocurrent. The …
monitor its dynamics under various stress conditions in high electron mobility transistor
(HEMT) devices. The method employs an optical spectroscopy of the channel current at
various bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To
analyze the results, we propose a model, according to which the energy distribution of the
surface charge density may be obtained from the derivative of the channel photocurrent. The …
[HTML][HTML] Surface states in AlGaN/GaN high electron mobility transistors: Quantitative energetic profiles and dynamics of the surface Fermi level
Y Turkulets, I Shalish - Applied Physics Letters, 2019 - pubs.aip.org
We present a method to obtain quantitative profiles of surface state charge density and
monitor its dynamics under various stress conditions in high electron mobility transistor
(HEMT) devices. The method employs optical spectroscopy of the channel current at various
bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To analyze
the results, we propose a model, according to which the energy distribution of the surface
charge density may be obtained from the derivative of the channel photocurrent. The …
monitor its dynamics under various stress conditions in high electron mobility transistor
(HEMT) devices. The method employs optical spectroscopy of the channel current at various
bias conditions. We test the method on a classical AlGaN/GaN HEMT structure. To analyze
the results, we propose a model, according to which the energy distribution of the surface
charge density may be obtained from the derivative of the channel photocurrent. The …
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