photoelectrochemical etching of deep macropores and trenches in Si, are investigated
theoretically and experimentally. It is shown that the presence of an unstructured silicon
interfacial layer between the air and the photonic crystal structure can give rise to surface
(Tamm) states within the TE and TM photonic stop bands. In the presence of roughness of
inner surfaces of air pores, the surface states show up as dips within the stop bands in the …