Switchable double wavelength generating vertical external cavity surface-emitting laser
J Muszalski, A Broda, A Trajnerowicz… - Optics …, 2014 - opg.optica.org
Optics Express, 2014•opg.optica.org
Switchable, double wavelength generation is demonstrated from a single vertical external
cavity surface-emitting laser chip. Power of~ 0.5 W for two wavelengths λ≈ 967nm and
1018nm ie within the spectral distance of 51nm were registered. In the semiconductor
heterostructure a single set of nominally identical quantum wells was enclosed in a single,
two-mode resonant microcavity. The wavelength switching was induced by the change of
the pump power. The increase or decrease of the pump power changes the active region …
cavity surface-emitting laser chip. Power of~ 0.5 W for two wavelengths λ≈ 967nm and
1018nm ie within the spectral distance of 51nm were registered. In the semiconductor
heterostructure a single set of nominally identical quantum wells was enclosed in a single,
two-mode resonant microcavity. The wavelength switching was induced by the change of
the pump power. The increase or decrease of the pump power changes the active region …
Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5W for two wavelengths λ≈967nm and 1018nm i.e. within the spectral distance of 51nm were registered. In the semiconductor heterostructure a single set of nominally identical quantum wells was enclosed in a single, two-mode resonant microcavity. The wavelength switching was induced by the change of the pump power. The increase or decrease of the pump power changes the active region temperature and thus tunes spectrally the gain spectrum to the one of two modes.
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