Cu-doped Cr₂O₃ thin films were deposited onto glass substrate by the sol–gel dip-coating (SGDC) process using dopant values of 0, 3, 6, 9 and 12%. The Chromium (III) Nitrate Nonahydrate [Cr(NO₃)₃·9H₂O] was used as a Cr source, whilst for the dopant, the corresponding nitrate (Cu(NO₃)₂) was used. The crystal structure, as well as the optical and electrical properties were examined. XRD data showed that the films with a high degree of crystallinity were rhombohedral Cr₂O₃ phase. The crystallite size reduces with increase in Cu doping proportion. The AFM results indicate a decrease in the surface roughness of the doped Cr₂O₃: Cu thin films. The UV-Vis spectra of the Cu doped-Cr₂O₃ films showed high transparency in the visible region. The optical band gap of Cr₂O₃ thin films decreases with increasing in Cu doping rate. The Nyquist plot shows that the equivalent circuit of Cu doped-Cr₂O₃ films is a parallel circuit R_pC_p. As the concentration of Cu increases, Resistance R_P regresses while capacitance C_p increases.