[HTML][HTML] Tunneling magnetoresistance sensors with different coupled free layers

YF Liu, X Yin, Y Yang, D Ewing, PJ De Rego, SH Liou - AIP Advances, 2017 - pubs.aip.org
… the free layer in magnetic tunnel junctions. These methods include using a hard magnet or
magnetic field bias, using an orthogonal synthetic-ferrimagnet coupled layer… sputtering system

Exchange bias tuning for magnetoresistive sensors by inclusion of non-magnetic impurities

PP Sharma, E Albisetti, M Monticelli, R Bertacco… - Sensors, 2016 - mdpi.com
… and blocking temperature ofexchange bias systems is an … synthetic antiferromagnet reference
layer and a top-pinned … fields, the magnetic anisotropy of the sensorfree layer” should be …

Robust giant magnetoresistance sensors

KMH Lenssen, DJ Adelerhof, HJ Gassen… - Sensors and Actuators A …, 2000 - Elsevier
… a reference direction while the free layer follows the external field … Recently, another bridge
sensor based on exchange-biased … Using this GMR material system we have realized sensor

Study of synthetic ferrimagnet-synthetic antiferromagnet structures for magnetic sensor application

A Guedes, MJ Mendes, PP Freitas… - Journal of applied …, 2006 - pubs.aip.org
… heads since they allow high magnetoresistance even for low … because it relates to the bias
point of the sensor. It is created … layer thickness difference in the CoFe ∕ Ru ∕ CoFe system). …

Magnetoresistive sensors

PP Freitas, R Ferreira, S Cardoso… - Journal of Physics …, 2007 - iopscience.iop.org
… can be used as synthetic free (SF) layers, in order to reduce … PM biasing or domain stabilization
using particular free layer … laserbased fluorescence scanner system to detect fluorescent …

Improved signal-to-noise ratio in current-perpendicular-to-plane giant magnetoresistance sensors using strong exchange-biased reference layers

G Mihajlović, JC Read, N Smith… - IEEE Magnetics …, 2016 - ieeexplore.ieee.org
… reducing the thickness of the free layer (FL) and the reference layer (RL) typically …
synthetic antiferromagnetic (SAF) design. The latter comprises a pinned layer (PL) exchange-biased

Alignment-free sensing module for absolute and incremental lines in linear positioning system based on tunneling-magnetoresistance sensors

CC Lee, YS Yen, CH Lai - Sensors, 2021 - mdpi.com
… in Figure 5b, the varied H x biasing field keeps changing the sensitivity of the sensing
layer and in-plane sensing layer, we are able to make all the sensors in the positioning system

Recent developments of magnetoresistive sensors for industrial applications

L Jogschies, D Klaas, R Kruppe, J Rittinger… - Sensors, 2015 - mdpi.com
… field, ranging from sensor systems fabricated on traditional … fm layers using “natural” or
synthetic antiferromagnetic layers (… (M) of a NiFe layer and acts as bias force, as predicted by …

Anisotropic magnetoresistance probed by non-resonant microwave absorption in exchange-biased NiFe/IrMn structures

RB Morgunov, MV Bakhmetiev, AD Talantsev… - Measurement, 2024 - Elsevier
… shape, is the anisotropic magnetoresistive sensor with a linear response in … design of
complex experimental systems with very high … The structure of the Cu free NiFe/IrMn sample was …

Linearization strategies for high sensitivity magnetoresistive sensors

AV Silva, DC Leitao, J Valadeiro, J Amaral… - The European Physical …, 2015 - epjap.org
… for medical diagnose and chemical spectroscopy, resonance … sensing as electrical current
sensors in power systems [10,11] … use of exchange biasing on the sensing layer, which upon …